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List 1. Semiconductor Datasheet Database

1. 1.5ke6v8a - 1.5KE6V8A/440A ® 1.5KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 1500 W (10/1000µs) BREAKDOWN VO
2. 1.5smc6.8a - 1.5SMC6.8A thru 1.5SMC220CA Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Volt
3. 100bgq015 - Bulletin PD-20995 rev. E 02/01 100BGQ015 100BGQ015J SCHOTTKY RECTIFIER 100 Amp Major Ratings and Characteri
4. 100bgq015j - Bulletin PD-20995 rev. E 02/01 100BGQ015 100BGQ015J SCHOTTKY RECTIFIER 100 Amp Major Ratings and Characteri
5. 100bgq030 - PD-20996 rev. D 11/99 100BGQ030 100BGQ030J SCHOTTKY RECTIFIER 100 Amp Major Ratings and Characteristics Des
6. 100bgq045 - PD-20709 rev. C 11/99 100BGQ045 100BGQ045J SCHOTTKY RECTIFIER 100 Amp Major Ratings and Characteristics Des
7. 100bgq100 - Preliminary Data Sheet PD-20999 rev. A 10/99 100BGQ100 100BGQ100J SCHOTTKY RECTIFIER 100 Amp Major Ratings
8. 100ms - ® 100MS EMI SHIELD DESCRIPTION The 100MS is an epoxy encapsulated electromagnetic/ over the module so the t
9. 100mt160p - Preliminary Data Sheet I27405 07/01 100MT160P THREE PHASE BRIDGE Power Module 100 A Features Solderable ni
10. 104mtkb - Bulletin I27504 08/97 MT..KB SERIES THREE PHASE AC SWITCH Power Modules Features 50 A Package fully compat
11. 10bf10-80 - Preliminary Data Sheet PD-20482 rev. B 06/99 10BF.. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB (
12. 10bq015 - Bulletin PD-2.396 rev. F 02/02 10BQ015 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Descr
13. 10bq030 - Bulletin PD-20708 rev. D 02/02 10BQ030 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Descr
14. 10bq040 - Bulletin PD-2.397 rev. D 02/02 10BQ040 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Descr
15. 10bq060 - Bulletin PD-2.438 rev. D 02/02 10BQ060 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Desc
16. 10bq100 - Bulletin PD-2.437 rev. D 02/02 10BQ100 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Des
17. 10ctq150 - PD-2.291 rev. B 04/99 10CTQ150 10CTQ150S 10CTQ150-1 SCHOTTKY RECTIFIER 10 Amp Major Ratings and Character
18. 10ctq150l - PD-20576 01/99 10CTQ150L SCHOTTKY RECTIFIER 10 Amp TO-262 Major Ratings and Characteristics Description/Fea
19. 10df1-8 - PD-20553 03/98 10DF. SERIES ULTRAFAST SWITCHING RECTIFIER DO-204AL (DO-41) Major Ratings and Characteristic
20. 10etf02_04_06 - Bulletin I2137 rev. B 10/00 QUIETIR Series 10ETF.. FAST SOFT RECOVERY VF < 1.2V @ 10A RECTIFIER DIODE trr
21. 10etf02fp_04fp_06fp - Bulletin I2163 04/02 QUIETIR Series 10ETF..FP FAST SOFT RECOVERY VF < 1.2V @ 10A RECTIFIER DIODE trr = 50
22. 10etf02s_04s_06s - I2140 rev. A 12/99 QUIETIR Series 10ETF..S FAST SOFT RECOVERY VF < 1.2V @ 10A RECTIFIER DIODE t = 50ns r
23. 10etf10_12 - I2146 rev. A 11/99 QUIETIR Series 10ETF.. FAST SOFT RECOVERY VF < 1.33V @ 10A RECTIFIER DIODE t = 80ns r
24. 10etf10s_12s - I2149 rev. A 11/99 QUIETIR Series 10ETF..S FAST SOFT RECOVERY VF < 1.33V @ 10A RECTIFIER DIODE t = 80ns
25. 10ets08_12_16 - Bulletin I2120 rev. A 07/97 SAFEIR Series 10ETS.. INPUT RECTIFIER DIODE VF < 1.1V @ 10A Description/Featur
26. 10ets08_s_12_s - Bulletin I2121 rev. C 12/01 SAFEIR Series 10ETS12, 10ETS12S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 20
27. 10ets08fp_12fp_16fp - Preliminary Data Sheet I2142 rev. A 03/99 SAFEIR Series 10ETS..FP INPUT RECTIFIER DIODE VF < 1.1V @ 10A TO
28. 10mq040n - Bulletin PD-20518 rev. G 02/02 10MQ040N SCHOTTKY RECTIFIER 2.1 Amp SMA Major Ratings and Characteristics D
29. 10mq060n - Bulletin PD-20519 rev. G 02/02 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Major Ratings and Characteristics D
30. 10mq100n - Bulletin PD-20520 rev. G 02/02 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp SMA Major Ratings and Characteristics De
31. 10ria_series - Bulletin I2405 rev. A 07/00 10RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 10A Improved glass
32. 10tq035_040_045 - Bulletin PD-20057 01/01 10TQ... 10TQ...S SCHOTTKY RECTIFIER 10 Amp IF(AV) = 10Amp VR = 35 to 45V Major Ra
33. 10tts08 - Preliminary Data Sheet I2143 11/97 SAFEIR Series 10TTS08 PHASE CONTROL SCR VT < 1.15V @ 6.5A ITSM = 140A
34. 10tts08s - Preliminary Data Sheet I2145 12/97 SAFEIR Series 10TTS08S SURFACE MOUNTABLE PHASE CONTROL SCR VT < 1.15V @
35. 10wq045fn - Bulletin PD-20530 rev. C 02/02 10WQ045FN SCHOTTKY RECTIFIER 10 Amp D-Pak (TO-252AA) Major Ratings and Char
36. 10yq045 - PD - 93860A SCHOTTKY RECTIFIER 10YQ045 HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristi
37. 10yq045c - PD -94088 SCHOTTKY RECTIFIER 10YQ045C HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristic
38. 110cnq045a - Bulletin PD-20629 rev. A 09/01 110CNQ045A SCHOTTKY RECTIFIER 110 Amp New GenIII D-61 Package Major Ratings
39. 110mt080kb - Bulletin I27501 08/97 MT..KB SERIES THREE PHASE BRIDGE Power Modules Features 90 A Package fully compatibl
40. 110rki40 - Bulletin I25152 rev. C 05/97 111RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features 110A High curren
41. 111cnq045a - Bulletin PD-20.758 rev. A 03/02 111CNQ045A SCHOTTKY RECTIFIER 110 Amp New GenIII D-61 Package Major Ratings
42. 111mt080kb - Bulletin I27503 08/97 MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features 55 A Package full
43. 111ria - Bulletin I25204 01/01 111RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features High current and high su
44. 112cnq030a - Bulletin PD-20630 rev. A 09/01 112CNQ030A 110 Amp SCHOTTKY RECTIFIER New GenIII D-61 Package Major Ratings
45. 113cnq080a - Bulletin PD-20631 rev. A 09/01 113CNQ...A SERIES SCHOTTKY RECTIFIER 110 Amp New GenIII D-61 Package Descrip
46. 113cnq - Bulletin PD-20631 09/01 113CNQ...A SERIES SCHOTTKY RECTIFIER 110 Amp New GenIII D-61 Package Description/Fe
47. 115cnq015a - Bulletin PD-20632 rev. A 09/01 115CNQ015A SCHOTTKY RECTIFIER 110 Amp New GenIII D-61 Package Major Ratings
48. 11dq03_04 - Bulletin PD-2.287 rev. D 03/02 11DQ03 11DQ04 SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics D
49. 11dq05 - Bulletin PD-2.288 rev. D 03/02 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics D
50. 11dq09 - Bulletin PD-2.289 rev. D 03/02 11DQ09 11DQ10 SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics D
51. 120lq045 - PD - 91858 SCHOTTKY RECTIFIER 120LQ045 HIGH EFFICIENCY SERIES 120 Amp, 45V Major Ratings and Characterist
52. 120lq100 - PD - 94396 SCHOTTKY RECTIFIER 120LQ100 HIGH EFFICIENCY SERIES 120 A, 100V Major Ratings and Characteristi
53. 120nq - PD-2.224 rev. C 09/98 120NQ...(R) SERIES SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Characteristics
54. 121nq - Bulletin PD-2.249 rev. B 03/01 121NQ...(R) SERIES SCHOTTKY RECTIFIER 120 Amp Major Ratings and Characteristi
55. 122nq030 - Bulletin PD-2.274 rev. B 03/01 122NQ030 (R) SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Characteristi
56. 123nq - Bulletin PD-2.250 rev. B 03/01 123NQ... (R) SERIES SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Charac
57. 124nq - Bulletin PD-2.290 rev. B 03/01 124NQ...(R) SERIES SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Charact
58. 125nq015 - Bulletin PD-2.275 rev. B 02/01 125NQ015 (R) SCHOTTKY RECTIFIER 120 Amp D-67 Major Ratings and Characteristi
59. 129nq135 - Bulletin PD-20719 rev. A 03/01 129NQ...(R) SERIES 120 Amp SCHOTTKY RECTIFIER D-67 Major Ratings and Chara
60. 12cgq150 - PD -20359D SCHOTTKY RECTIFIER 12CGQ150 HIGH EFFICIENCY SERIES 35A, 150V Description/Features Major Rati
61. 12clq150 - PD -20532C SCHOTTKY RECTIFIER 12CLQ150 HIGH EFFICIENCY SERIES 35A, 150V Major Ratings and Characteristic
62. 12ctq - Bulletin PD-20554 rev. B 07/01 12CTQ... 12CTQ...S 12CTQ... -1 SCHOTTKY RECTIFIER 12 Amp IF(AV) = 12Amp VR
63. 12cwq03fn - Bulletin PD-20558 rev. C 02/02 12CWQ03FN SCHOTTKY RECTIFIER 12 Amp D-Pak (TO-252AA) Major Ratings and Chara
64. 12cwq04fn - Bulletin PD-20546 rev. D 02/02 12CWQ04FN SCHOTTKY RECTIFIER 12 Amp D-Pak (TO-252AA) Major Ratings and Char
65. 12cwq06fn - Bulletin PD-20547 rev. E 02/02 12CWQ06FN SCHOTTKY RECTIFIER 12 Amp D-Pak (TO-252AA) Major Ratings and Chara
66. 12cwq10fn - Bulletin PD-20548 rev. D 02/02 12CWQ10FN SCHOTTKY RECTIFIER 12 Amp D-Pak (TO-252AA) Major Ratings and Chara
67. 12cwq150fn - Preliminary Data Sheet PD-2.549 04/97 12CWQ150FN SCHOTTKY RECTIFIER 12 Amp Major Ratings and Characteristics
68. 12f - Bulletin I20205 rev. A 09/98 12F(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 12 A High surge
69. 12tq - Bulletin PD-20239 rev. B 12/01 12TQ... 12TQ...S SCHOTTKY RECTIFIER 15 Amp IF(AV) = 15Amp VR = 35 to 45V M
70. 12tts08 - Preliminary Data Sheet I2144 11/97 SAFEIR Series 12TTS08 PHASE CONTROL SCR VT < 1.2V @ 8A ITSM = 140A Des
71. 130hf - Bulletin I2019 rev. A 07/94 130HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 130 A High curr
72. 130mt080kb - Bulletin I27502 08/97 MT..KB SERIES THREE PHASE BRIDGE Power Modules Features 130 A Package fully compatib
73. 150cmq - PD-2.251 rev. A 12/97 150CMQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Descript
74. 150cnq035 - PD - 2.535 11/97 150CNQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/F
75. 150ebu02 - Bulletin PD-20741 rev. A 01/01 150EBU02 Ultrafast Soft Recovery Diode Features trr = 45ns • Ultrafast Reco
76. 150ebu04 - Bulletin PD-20744 rev. A 01/01 150EBU04 Ultrafast Soft Recovery Diode Features trr = 60ns • Ultrafast Reco
77. 150k - Bulletin I2037 SERIES 45L(R), 150K /L /KS(R) STANDARD RECOVERY DIODES Stud Version 150A Features Alloy di
78. 151cmq - PD-2.252 rev. A 12/97 151CMQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Descript
79. 151cnq035 - PD - 2.536 11/97 151CNQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/F
80. 152cmq030 - PD-2.276 rev. A 12/97 152CMQ030 SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Fea
81. 152cnq030 - PD - 2.537 11/97 152CNQ030 SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/F
82. 153cmq080 - PD-2.253 rev. A 12/97 153CMQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Descript
83. 153cnq080 - PD - 2.538 11/97 153CNQ... SERIES SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/F
84. 155cmq015 - Bulletin PD-20595 11/01 155CMQ015 SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/
85. 15cgq100 - PD -20345D SCHOTTKY RECTIFIER 15CGQ100 HIGH EFFICIENCY SERIES 35 Amp, 100V Major Ratings and Characteris
86. 15cljq045 - PD -93948 SCHOTTKY RECTIFIER 15CLJQ045 HIGH EFFICIENCY SERIES 15 Amp, 45V Major Ratings and Characteristi
87. 15cljq150 - PD -93950 SCHOTTKY RECTIFIER 15CLJQ150 HIGH EFFICIENCY SERIES 15 Amp, 150V Major Ratings and Characteris
88. 15clq100 - PD -20351F SCHOTTKY RECTIFIER 15CLQ100 HIGH EFFICIENCY SERIES 15A, 100V Major Ratings and Characteristic
89. 15ctq035 - Bulletin PD-20240 09/00 15CTQ... 15CTQ...S 15CTQ... -1 SCHOTTKY RECTIFIER 15 Amp IF(AV) = 15Amp VR = 35 t
90. 15eth03 - Bulletin PD-20031 rev. B 04/01 15ETH03 15ETH03S 15ETH03-1 Ultrafast Rectifier Features trr = 40ns • Ultr
91. 15eth06 - Bulletin PD-20749 rev. D 08/01 15ETH06 15ETH06S 15ETH06-1 Hyperfast Rectifier Features trr = 22ns typ. •
92. 15ljq100 - PD -91855A SCHOTTKY RECTIFIER 15LJQ100 HIGH EFFICIENCY SERIES 15A, 100V Description/Features Major Rati
93. 15mq040 - PD-2.292 rev. A 12/97 15MQ040 SCHOTTKY RECTIFIER 1.5 Amp Major Ratings and Characteristics Description/Featu
94. 15mq040n - Bulletin PD-20517 rev. E 02/02 15MQ040N SCHOTTKY RECTIFIER 3 Amp SMA Major Ratings and Characteristics Desc
95. 15tq060 - Bulletin PD-20563 rev. A 09/01 15TQ060 15TQ060S SCHOTTKY RECTIFIER 15 Amp Major Ratings and Characteristics
96. 15yq100c - PD - 93954 SCHOTTKY RECTIFIER 15YQ100C HIGH EFFICIENCY SERIES 15 Amp, 100V Major Ratings and Characterist
97. 160cmq - PD-2.254 rev. A 12/97 160CMQ... SERIES SCHOTTKY RECTIFIER 160 Amp Major Ratings and Characteristics Descript
98. 160cnq035 - Bulletin PD-2.316 05/00 160CNQ... SERIES SCHOTTKY RECTIFIER 160 Amp TO-249AA Description/Features Major Ra
99. 161cmq - PD-2.174 rev. B 12/97 161CMQ... SERIES SCHOTTKY RECTIFIER 160 Amp Major Ratings and Characteristics Descript
100. 161cnq035 - Bulletin PD-2.175 05/00 161CNQ... SERIES SCHOTTKY RECTIFIER 160 Amp TO-249AA Description/Features Major Ra
101. 162cmq030 - PD-2.277 rev. A 12/97 162CMQ030 SCHOTTKY RECTIFIER 160 Amp Major Ratings and Characteristics Description/Fea
102. 162cnq030 - Bulletin PD-2.366 05/00 162CNQ030 SCHOTTKY RECTIFIER 160 Amp TO-249AA Description/Features Major Ratings a
103. 163cmq - PD-2.255 rev. A 12/97 163CMQ... SERIES SCHOTTKY RECTIFIER 160 Amp Major Ratings and Characteristics Descript
104. 16ctq - Bulletin PD-20192 rev. G 06/01 16CTQ... 16CTQ...S 16CTQ...-1 SCHOTTKY RECTIFIER 16 Amp Major Ratings and
105. 16ctu04 - Bulletin PD-20752 rev. A 11/01 16CTU04 16CTU04S 16CTU04-1 Ultrafast Rectifier trr = 60ns Features • Ultr
106. 16cyq045c - PD-94289 SCHOTTKY RECTIFIER 16CYQ045C HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristic
107. 16cyq100c - PD-94016 SCHOTTKY RECTIFIER 16CYQ100C HIGH EFFICIENCY SERIES 16 Amp, 100V Major Ratings and Characteristi
108. 16cyq150c - PD-94217 SCHOTTKY RECTIFIER 16CYQ150C HIGH EFFICIENCY SERIES 16 Amp, 150V Major Ratings and Characteristi
109. 16f - Bulletin I20204 rev. A 09/98 16F(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 16 A High surge
110. 16m-dram -
111. 16m-dram_-_1 -
112. 16m-dram_-_2 -
113. 16m-dram_-_3 -
114. 16m-dram_-_4 -
115. 16m-dram_-_5 -
116. 16m-dram_-_6 -
117. 16ria - Bulletin I2404 rev. A 07/00 16RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 16A Improved glass
118. 16scyq030c - PD-93964 SCHOTTKY RECTIFIER 16SCYQ030C HIGH EFFICIENCY SERIES 16 Amp, 30V Major Ratings and Characteristi
119. 16scyq045c - PD-93980A SCHOTTKY RECTIFIER 16SCYQ045C HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characterist
120. 16scyq060c - PD-93979 SCHOTTKY RECTIFIER 16SCYQ060C HIGH EFFICIENCY SERIES 16 Amp, 60V Major Ratings and Characteristi
121. 16syq030c - PD -93952C SCHOTTKY RECTIFIER 16SYQ030C HIGH EFFICIENCY SERIES 16A, 30V Major Ratings and Characteristics
122. 16syq045c - PD - 93981A SCHOTTKY RECTIFIER 16SYQ045C HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristic
123. 16syq060c - PD - 94219A SCHOTTKY RECTIFIER 16SYQ060C HIGH EFFICIENCY SERIES 16A, 60V Description/Features Major Rati
124. 16tts-s - Bulletin I2105 rev. D 12/98 SAFEIR Series 16TTS..S SURFACE MOUNTABLE PHASE CONTROL SCR VT < 1.4V @ 10A De
125. 16tts - Bulletin I2115 rev. D 12/98 SAFEIR Series 16TTS.. PHASE CONTROL SCR VT < 1.4V @ 10A ITSM = 200A Descripti
126. 16tts_fp - Preliminary Data Sheet I2147 rev. C 03/99 SAFEIR Series 16TTS..FP PHASE CONTROL SCR TO-220 FULLPAK VT < 1.
127. 16yq030c - PD -93952 SCHOTTKY RECTIFIER 16YQ030C HIGH EFFICIENCY SERIES 16 Amp, 30V Major Ratings and Characteristic
128. 16yq045c - PD - 94303C SCHOTTKY RECTIFIER 16YQ045C HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics
129. 16yq100c - PD - 93954B SCHOTTKY RECTIFIER 16YQ100C HIGH EFFICIENCY SERIES 16A, 100V Major Ratings and Characteristic
130. 16yq150c - PD - 94218A SCHOTTKY RECTIFIER 16YQ150C HIGH EFFICIENCY SERIES 16 Amp, 150V Major Ratings and Characteris
131. 175bgq030 - PD-20997 rev. D 11/99 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Des
132. 175bgq045 - PD-20710 rev. C 11/99 175BGQ045 175BGQ045J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Des
133. 180nq - PD-2.227 rev. B 12/97 180NQ... SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Descripti
134. 181nq - PD-2.293 rev. A 12/97 181NQ... SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Descripti
135. 181rki - Bulletin I25153/B 181RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features 180A Hermetic glass-metal s
136. 182nq030 - PD-2.278 rev. A 12/97 182NQ030 SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Feat
137. 183nq - PD-2.256 rev. A 12/97 183NQ... SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Descripti
138. 185nq015 - Bulletin PD-2.279 rev. B 02/01 185NQ015 SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Descrip
139. 189nq135 - PD-20720 12/99 189NQ... SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Feat
140. 18tq - Bulletin PD-20178 rev. B 12/01 18TQ... 18TQ...S SCHOTTKY RECTIFIER 18 Amp IF(AV) = 18Amp VR = 35 to 45V M
141. 19mt050xf - Target Data 05/01 19MT050XF HEXFET® Power MOSFET "FULL-BRIDGE" FREDFET MTP Features VDSS = 500V • Low On-
142. 19tq015 - Bulletin PD-20266 rev. B 02/01 19TQ015 19TQ015S SCHOTTKY RECTIFIER 19 Amp IF(AV) = 19Amp VR = 15V Major R
143. 1a1-1a9 - 1A1 THRU 1A9 MINIATURE GENERAL PURPOSE PLASTIC RECTIFIER Reverse VoItage - 50 to 1500 Volts Forward Current
144. 1b21 -
145. 1b22 - Programmable, Isolated a Voltage-to-Current Converter 1B22 FEATURES FUNCTIONAL BLOCK DIAGRAM Internal Iso
146. 1b31 -
147. 1b32 -
148. 1b41 -
149. 1b51 -
150. 1b_series - Bulletin E2788 rev. D 04/00 1B SERIES 1A Single Phase D.I.L. Rectifier Bridge • Leads on standard 0.1" grid
151. 1bq_series -
152. 1f1-1f7 - 1F1 THRU 1F7 FAST SWITCHING PLASTIC RECTIFIER Reverse VoItage - 50 to 1000 Volts Forward Current - 1.0 Amper
153. 1g1-1g7 - 1G1 THRU 1G7 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Reverse VoItage - 50 to 1000 Volts Forward Curren
154. 1kab-e_series -
155. 1n1183 -
156. 1n1199a -
157. 1n2054 -
158. 1n3085 -
159. 1n3208 -
160. 1n3288a -
161. 1n3595 - 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless other
162. 1n3879 -
163. 1n4001 -
164. 1n4001_4007 - 1N4001 - 1N4007 Features • Low forward voltage drop. • High surge current capability. DO-41 COLOR BAND DEN
165. 1n4001g - 1N4001G THRU 1N4007G, BY133G GLASS PASSIVATED JUNCTION RECTIFIER Reverse VoItage - 50 to 1300 Volts Forward
166. 1n4001gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
167. 1n4001id - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 1N4001ID to 1N4007ID Rectifiers 1996 Jun 10 Pro
168. 1n4001rev5dx - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1N4001/D Axial Lead 1N4001 Standard Recovery
169. 1n4002gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
170. 1n4003gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
171. 1n4004 - 1N4001 - 1N4007 Features • Low forward voltage drop. • High surge current capability. DO-41 COLOR BAND DEN
172. 1n4004a - Diodes General purpose rectifier diode 1N4004A *This product is marketed only in countries other than Japan.
173. 1n4004gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
174. 1n4005 - 1N4001 - 1N4007 Features • Low forward voltage drop. • High surge current capability. DO-41 COLOR BAND DEN
175. 1n4005gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
176. 1n4006 - 1N4001 - 1N4007 Features • Low forward voltage drop. • High surge current capability. DO-41 COLOR BAND DEN
177. 1n4006gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
178. 1n4007 - 1N4001 - 1N4007 Features • Low forward voltage drop. • High surge current capability. DO-41 COLOR BAND DEN
179. 1n4007gp - 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
180. 1n4044 -
181. 1n4148 - 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless otherwi
182. 1n4148_1n4448_4 - DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product specification 2002 Jan
183. 1n4148_rohm - Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B This product is available only outside
184. 1n4148p - DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes 1996 Sep 03 Product sp
185. 1n4150 - Discrete POWER & Signal Technologies 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL41
186. 1n4152 - 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless other
187. 1n4154 - DISCRETE POWER AND SIGNAL 1N4154 TECHNOLOGIES General Description: Features: The high breakdown voltage, fa
188. 1n4370-4372a - Zeners 1N4370A - 1N4372A 1N746A - 1N759AT Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherw
189. 1n4446 - 1N4446 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless other
190. 1n4448 - 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless otherwi
191. 1n4454 - Discrete POWER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1
192. 1n4531 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specifi
193. 1n457 - 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless othe
194. 1n4678-4702 - Zeners 1N4678 - 1N4702 Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Pa
195. 1n4728 - 1N4728 THRU 1N4764 SILICON PLANAR POWER ZENER DIODES Features SiIicon PIanar Power Zener Diodes for use in
196. 1n4728a-4754a - 1N4728A DC COMPONENTS CO., LTD. THRU RECTIFIER SPECIALISTS R 1N4754A TECHNICAL SPECIFICATIONS OF GLASS SI
197. 1n4728a-4764a -
198. 1n4728a-64a - Zeners 1N4728A - 1N4764A Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol
199. 1n485b - 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless other
200. 1n486b - 1N486B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless other
201. 1n4933 - 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability.
202. 1n4933g - 1N4933G THRU 1N4937G GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse VoItage - 50 to 600 Volts Fo
203. 1n4933gp - 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
204. 1n4933rev3dx - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1N4933/D Axial-Lead 1N4933 Fast-Recovery Rec
205. 1n4934 - 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability.
206. 1n4934gp - 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
207. 1n4935 - 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability.
208. 1n4935gp - 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
209. 1n4936 - 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability.
210. 1n4936gp - 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
211. 1n4937 - 1N4933 - 1N4937 Features • Low forward voltage drop. • High surge current capability. • High reliability.
212. 1n4937_c -
213. 1n4937gp - 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliabilit
214. 1n4942 - 1N4942 THRU 1N4948 FAST SWITCHING PLASTIC RECTIFIER Reverse VoItage - 200 to 1000 Volts Forward Current - 1.
215. 1n4942g - 1N4942G THRU 1N4948G GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse VoItage - 200 to 1000 Volts
216. 1n5059 - DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectif
217. 1n5221-5279b - Zeners 1N5221B - 1N5279B Tolerance = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol P
218. 1n5221-5281 - 1N5221 THRU 1N5281 SILICON PLANAR ZENER DIODES Features SiIicon PIanar Zener Diodes Standard Zener voltage
219. 1n5231c - Zeners 1N5231C Tolerance: B = 2% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Paramete
220. 1n5283-5314 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5283 Current Regulator Diodes through Field-effect current regula
221. 1n5283 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5283 Current Regulator Diodes through Field-effect current regula
222. 1n5292 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5283 Current Regulator Diodes through Field-effect current regula
223. 1n5333b - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B 5 Watt Surmetic 40 through Silicon Zener Diodes 1N5388B T
224. 1n5391 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
225. 1n5391_5399 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
226. 1n5391g - 1N5391G THRU 1N5399G GLASS PASSIVATED JUNCTION RECTIFIER Reverse VoItage - 50 to 1000 Volts Forward Current
227. 1n5392 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
228. 1n5393 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
229. 1n5394 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
230. 1n5395 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
231. 1n5396 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
232. 1n5397 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
233. 1n5398 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
234. 1n5399 - 1N5391 - 1N5399 Features • 1.5 ampere operation at TA = 70°C with no thermal runaway. • High current capabi
235. 1n5400 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
236. 1n5400g - 1N5400G THRU 1N5408G GLASS PASSIVATED JUNCTION RECTIFIER Reverse VoItage - 50 to 1000 Volts Forward Current
237. 1n5400rev2dx - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1N5400/D Axial-Lead 1N5400 Standard Recovery
238. 1n5401 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
239. 1n5402 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
240. 1n5403 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
241. 1n5404 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
242. 1n5405 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
243. 1n5406 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
244. 1n5407 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
245. 1n5408 - 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capabi
246. 1n5711 - 1N5711 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- dow
247. 1n5817-5819_f - 1N5817 - 1N5819 Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low volt
248. 1n5817-5819_phi - DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diode
249. 1n5817 - Bulletin PD-20646 rev. A 02/02 1N5817 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Descript
250. 1n5817rev3dx - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1N5817/D Axial Lead Rectifiers 1N5817 . . .
251. 1n5818 - Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Descript
252. 1n5820-5822_f - 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low volt
253. 1n5820 - Bulletin PD-20647 rev. A 02/02 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Descripti
254. 1n5820rev2dx - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1N5820/D Designer's? Data Sheet 1N5820 Axial
255. 1n5908 - 1N5908 ® SM5908 TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W (10/1000µs) RE
256. 1n5985-6025b - Zeners 1N5985B - 1N6025B Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol
257. 1n6096 - PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Description
258. 1n6098 - PD-2.329 rev. A 12/97 1N6097 1N6098 SCHOTTKY RECTIFIER 50 Amp Major Ratings and Characteristics Description
259. 1n6263 - 1N6263 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- dow
260. 1n6264 - 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.2
261. 1n6265 - 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.2
262. 1n6266 - 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.2
263. 1n6391 - PD-2.079 rev. B 12/97 1N6391 SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Description/Feature
264. 1n6392 - PD-2.080 rev. B 12/97 1N6392 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Feature
265. 1n6762 - 1N6762, 1N6762R, JANTX1N6762, JANTX1N6762R, JANTXV1N6762, JANTXV1N6762R 1N6763, 1N6763R, JANTX1N6763, JANTX1N6
266. 1n6766 - 1N6766, 1N6766R, JANTX1N6766, JANTX1N6766R, JANTXV1N6766, JANTXV1N6766R 1N6767, 1N6767R, JANTX1N6767, JANTX1N6
267. 1n6768 - 1N6768, 1N6768R JAN1N6768, JAN1N6768R, JANTX1N6768, JANTX1N6768R, JANTXV1N6768, JANTXV1N6768R 1N6769, 1N6769R
268. 1n6774 - 1N6774, JANTX1N6774, JANTXV1N6774 1N6775, JANTX1N6775, JANTXV1N6775 1N6776, JANTX1N6776, JANTXV1N6776 1N6777
269. 1n6778 - 1N6778, JANTX1N6778, JANTXV1N6778 1N6779, JANTX1N6779, JANTXV1N6779 JANTX, JANTXV POWER RECTIFIER, SINGLE T
270. 1n746 - 1N746 THRU 1N759 SILICON PLANAR ZENER DIODES Features SiIicon PIanar Zener Diodes Standard Zener voltage to
271. 1n746a-759at - Zeners 1N4370A - 1N4372A 1N746A - 1N759AT Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherw
272. 1n746a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
273. 1n748a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
274. 1n750a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
275. 1n754a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
276. 1n755a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
277. 1n756a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
278. 1n757a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
279. 1n758a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
280. 1n759a - Zeners 1N746A - 1N759A Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol
281. 1n821 - DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diod
282. 1n821_1n829 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A Temperature-Compensated 1N825,A 1N827,A Zener Refer
283. 1n914_916 - 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* TA = 25°C unless otherwi
284. 1n957-991b - Zeners 1N957B - 1N991B Tolerance = 5% Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Pa
285. 1n957 - 1N957 THRU 1N978 SILICON PLANAR ZENER DIODES Features SiIicon PIanar Zener Diodes Standard Zener voltage to
286. 1pmt5913bt3-48bt3 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1PMT5913BT3/D 1PMT5913BT3 Product Preview th
287. 1sma10cat3-78cat3 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA10CAT3/D 1SMA10CAT3 Zener Transient Volta
288. 1sma5913bt3-45bt3 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5913BT3/D 1SMA5913BT3 through 1.5 Watt P
289. 1sma5_0at3-78at3 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 1SMA5.0AT3/D 1SMA5.0AT3 Zener Transient Volta
290. 1smb5913bt3-56bt3 - MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 3 Watt Plastic Surface Mount through Silicon Zener Diod
291. 1sr124-400a - Diodes High–speed rectifier diode 1SR124–400A FExternal dimensions (Units: mm) FApplications High speed re
292. 1sr139-400_600 - Diodes General purpose rectifier diode (mold type) 1SR139–400 / 1SR139–600 FExternal dimensions (Units: mm)
293. 1sr153-400 - Diodes High–speed rectifier diode 1SR153–400 FExternal dimensions (Units: mm) FApplications High speed rec
294. 1sr154-400_600 - Diodes Rectifier diode 1SR154–400 / 1SR154–600 FExternal dimensions (Units: mm) FApplications 1) General p
295. 1sr156-400 - Diodes High–speed rectifier diode 1SR156–400 FExternal dimensions (Units: mm) FApplications High speed rec
296. 1sr159-200 - Diodes Ultra high–speed rectifier diode 1SR159–200 FExternal dimensions (Units: mm) FApplications High fre
297. 1sr35-400a - Diodes General purpose rectifier diode 1SR35–400A FExternal dimensions (Units: mm) FApplications General p
298. 1ss133 - 1SS133 Diodes High-speed switching diode 1SS133 Applications External dimensions (Units : mm) High speed
299. 1ss154_ba_sot23 - 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applicatio
300. 1ss181_ - 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Applicatio
301. 1ss184_ - 1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High Speed Switching Applicatio
302. 1ss187_ - 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Applicatio
303. 1ss190_ - 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Applicatio
304. 1ss193_ - 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Applicatio
305. 1ss196_ - 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Applicatio
306. 1ss226_ - 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Applicatio
307. 1ss244 - 1SS244 Diodes High-voltage switching diode 1SS244 Applications External dimensions (Units : mm) High volt
308. 1ss250_ - 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Applicatio
309. 1ss268_ -
310. 1ss269_ -
311. 1ss271_ -
312. 1ss272_ - 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Applicatio
313. 1ss294_ - 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Swi
314. 1ss295_ -
315. 1ss300_ - 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Unit
316. 1ss301_ - 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit
317. 1ss302_ - 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Unit
318. 1ss306_ - 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications
319. 1ss307_ - 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Unit
320. 1ss308_ - 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications Unit
321. 1ss309_ - 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Unit
322. 1ss311_ - 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications
323. 1ss312_ -
324. 1ss313_ -
325. 1ss314_ - 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications Unit: mm
326. 1ss315_ - 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit:
327. 1ss319_ - 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm
328. 1ss321_ - 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching
329. 1ss322_ - 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching
330. 1ss336_ - 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit:
331. 1ss337_ - 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit:
332. 1ss344_ - 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Applicatio
333. 1ss345 - Ordering number :EN3157B 1SS345 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications F
334. 1ss348_ - 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching U
335. 1ss349_ - 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Applicatio
336. 1ss350 - Ordering number :EN3156A 1SS350 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications F
337. 1ss351 - Ordering number :EN3240B 1SS351 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications F
338. 1ss352_ - 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit:
339. 1ss355 - 1SS355 Diodes High-Speed Switching Diode 1SS355 Applications External dimensions (Unit : mm) High speed s
340. 1ss356 - Diodes Band switching diode 1SS356 FExternal dimensions (Units: mm) FApplications High frequency switching
341. 1ss357_ - 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching U
342. 1ss358 - Ordering number :EN4561A 1SS358 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features Pa
343. 1ss360_ - 1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit:
344. 1ss360f_ - 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Un
345. 1ss361_ - 1SS361 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application Unit
346. 1ss361f_ - 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Un
347. 1ss362_ - 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit:
348. 1ss364_ -
349. 1ss365 - Ordering number :EN4562A 1SS365 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features Pa
350. 1ss366 - Ordering number :EN4563A 1SS366 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features Pa
351. 1ss367_ - 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application U
352. 1ss370_ - 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Application
353. 1ss372_ - 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application U
354. 1ss374_ - 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application U
355. 1ss375 - Ordering number :EN4690 1SS375 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features Pac
356. 1ss376 - Diodes High–voltage band switching diode 1SS376 FExternal dimensions (Units: mm) FApplications High voltag
357. 1ss377_ - 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm
358. 1ss378_ - 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit:
359. 1ss379_ - 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications Unit
360. 1ss380 - Diodes Low-leakage switching diode 1SS380 FExternal dimensions (Units: mm) FApplications Low leakage switc
361. 1ss381_ - 1SS381 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 VHF Tuner Band Switch Applications Unit: mm
362. 1ss382_ - 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit:
363. 1ss383_ - 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching U
364. 1ss383t - 1SS383T1G, 1SS383T2G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4-lead
365. 1ss384_ - 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching U
366. 1ss385_ - 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm L
367. 1ss385f_ - 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm
368. 1ss387_ - 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit:
369. 1ss388_ - 1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application U
370. 1ss389_ - 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application U
371. 1ss390 - Diodes Band switching diode 1SS390 New FExternal dimensions (Units: mm) FApplications High frequency switc
372. 1ss391_ - 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching U
373. 1ss392_ - 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application U
374. 1ss393_ - 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application U
375. 1ss394_ - 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application U
376. 1ss395_ - 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application U
377. 1ss396_ - 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching U
378. 1ss397_ - 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applicatio
379. 1ss398_ - 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applicatio
380. 1ss399_ - 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applicatio
381. 1ss400 - 1SS400 Diodes High-Speed Switching Diode 1SS400 • Applications • External dimensions (Unit : mm) • • • •
382. 1ss401_ - 1SS401 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS401 Unit in mm High Speed Switching Appli
383. 1ss402_ - 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Appli
384. 1ss403_ - 1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit in mm High Voltage Switching Applications
385. 1ss404_ - 1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications
386. 1sv128_ -
387. 1sv160_v1_sot323 - 1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Re
388. 1sv172_ - 1SV172 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV172 VHF~UHF Band RF Attenuator Applications Unit: m
389. 1sv214_ - 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • H
390. 1sv215_ - 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning Unit: mm •
391. 1sv216_ - 1SV216 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV216 TV VHF UHF Tuner AFC Un
392. 1sv217_ - 1SV217 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV217 CATV Tuning Unit: mm •
393. 1sv225_ - 1SV225 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applica
394. 1sv228_ - 1SV228 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV228 Electronic Tuning Applica
395. 1sv229_ - 1SV229 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 VCO for UHF Band Radio
396. 1sv230_ - 1SV230 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV230 CATV Converter 1st OSC Tu
397. 1sv231_ - 1SV231 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV231 CATV Tuning Unit: mm •
398. 1sv232_ - 1SV232 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV232 CATV Tuning Unit: mm •
399. 1sv233 - Ordering number :EN3088B 1SV233 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Use Features Package Dim
400. 1sv234 - Ordering number :EN3089B 1SV234 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
401. 1sv237_ - 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: m
402. 1sv239_ - 1SV239 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 VCO for UHF Radio Unit:
403. 1sv241 - Ordering number :EN4560A 1SV241 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
404. 1sv242_ - 1SV242 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV242 TV VHF Wide Band Tuning
405. 1sv245_ - 1SV245 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV245 UHF SHF Tuning Unit: mm
406. 1sv246 - Ordering number :EN3906 1SV246 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pac
407. 1sv247 - Ordering number :EN4151 1SV247 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pac
408. 1sv248 - Ordering number :EN4400A 1SV248 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
409. 1sv249 - Ordering number :EN4401A 1SV249 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
410. 1sv250 - Ordering number :EN4402A 1SV250 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
411. 1sv251 - Ordering number :EN4403A 1SV251 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
412. 1sv252_ - 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: m
413. 1sv262_ - 1SV262 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 CATV Tuning Unit: mm •
414. 1sv263 - Ordering number :EN4510A 1SV263 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
415. 1sv264 - Ordering number :EN4511A 1SV264 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
416. 1sv265 - Ordering number :EN4512A 1SV265 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
417. 1sv266 - Ordering number :EN4513 1SV266 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pac
418. 1sv267 - Ordering number :EN4514A 1SV267 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Pa
419. 1sv268 - Ordering number :EN4923 1SV268 Silicon Epitaxial Type Transmitting, Receiving Antenna-switch Use PIN Diode
420. 1sv269_ - 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning Unit: mm •
421. 1sv270_ - 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio
422. 1sv271_ - 1SV271 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV271 VHF~UHF Band RF Attenuator Applications Unit: m
423. 1sv272 - Ordering number :EN4924 1SV272 Silicon Epitaxial Type Transmitting, Receiving Antenna-switch Use PIN Diode
424. 1sv276_ - 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio
425. 1sv277_ - 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio
426. 1sv278_ - 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning Unit: mm • H
427. 1sv279_ - 1SV279 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 VCO for V/UHF Band Radio
428. 1sv280_ - 1SV280 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV280 VCO for UHF Band Radio
429. 1sv281_ - 1SV281 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 VCO for V/UHF Band Radio
430. 1sv282_ - 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning Unit: mm •
431. 1sv283_ - 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning Unit: mm •
432. 1sv284_ - 1SV284 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio
433. 1sv285_ - 1SV285 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV285 VCO for UHF Band Radio
434. 1sv286_ - 1SV286 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV286 CATV Converter 1’st OSC T
435. 1sv287_ - 1SV287 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV287 UHF SHF Tuning Unit: mm
436. 1sv288_ - 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning Unit: mm •
437. 1sv290__tj__sod523 - 1SV290 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290 CATV Tuning Unit: mm •
438. 1sv291_ - 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning Unit: mm
439. 1sv293_ - 1SV293 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV293 VCO for UHF Band Radio
440. 1sv294 - Ordering number : ENN5136A 1SV294 Silicon Epitaxial PIN Diode 1SV294 Variable Resistance Attenuator Use Fe
441. 1sv298 - Ordering number : ENN5224B 1SV298 Silicon Epitaxial PIN Diode 1SV298 ? Type Attenuator Applications Featur
442. 1sv298h - Ordering number : ENN*6949 1SV298H Silicon Epitaxial PIN Diode 1SV298H ? Type Attenuator Applications Prel
443. 1sv302_ - 1SV302 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning Unit: mm •
444. 1sv303_ - 1SV303 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV303 CATV Tuning Unit: mm •
445. 1sv304_ - 1SV304 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 VCO for VHF Band Radio
446. 1sv305_ - 1SV305 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV305 VCO for VHF Band Radio
447. 1sv306_ - 1SV306 TOSHIBA Variable Capacitance Diode Preliminary Silicon Epitaxial Planar Type 1SV306 VCO for UH
448. 1sv307_ - 1SV307 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV307 VHF Tuner Band Switch Applications Unit: mm •
449. 1sv308_ - 1SV308 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 VHF Tuner Band Switch Applications Unit: mm •
450. 1sv309_ - 1SV309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV309 UHF SHF Tuning Unit: mm • High capacitance
451. 1sv310_v1__sot323 - 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio Unit: mm • High capa
452. 1sv311_ - 1SV311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 VCO for UHF Band Radio Unit: mm • High capa
453. 1sv312_ - 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications Unit: m
454. 1sv313_ - 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Ca
455. 1sv314_ - 1SV314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV314 VCO FOR UHF BAND RADIO Unit: mm High Capa
456. 1sv315 - Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Features Packa
457. 1sv316 - Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Features Packa
458. 1sv316__uv__sot323 - Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Features Packa
459. 1sv322_ - 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio:
460. 1sv323_ - 1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm • High capacitance ratio:
461. 1sv324_ - 1SV324 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 TCXO/VCO Unit: mm • High capacitance ratio:
462. 1sv325_ - 1SV325 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 TCXO/VCO Unit: mm • High capacitance ratio:
463. 1sv328_ - 1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio Unit: mm • High capa
464. 1sv329_ - 1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio Unit: mm • High capa
465. 1sv331_ - 1SV331 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV331 Useful for VCO/TCXO Uni
466. 1t362 - 1T362 Silicon Variable Capacitance Diode Description M-235 The 1T362 is a variable capacitance diode desig
467. 1t362a - 1T362A Silicon Variable Capacitance Diode Description M-235 The 1T362A is a variable capacitance diode des
468. 1t363 - 1T363 Silicon Variable Capacitance Diode Description M-235 The 1T363 is a variable capacitance diode desig
469. 1t363a - 1T363A Silicon Variable Capacitance Diode Description M-235 The 1T363A is a variable capacitance diode des
470. 1t365 - 1T365 Silicon Variable Capacitance Diode Description M-235 The 1T365 is a variable capacitance diode conta
471. 1t367 - 1T367 UHF band VCO Description M-235 The 1T367 is a variable capacitance diode housed in super miniature p
472. 1t368 - 1T368 Variable Capacitance Diode Description M-235 The 1T368 is a variable capacitance diode contained in
473. 1t368a - 1T368A Variable Capacitance Diode Description M-235 The 1T368A is a variable capacitance diode designed fo
474. 1t369 - 1T369 Silicon Variable Capacitance Diode Description M-235 The 1T369 is a super miniature package variable
475. 1t378a - 1T378A Variable Capacitance Diode Description M-235 The 1T378A is a variable capacitance diode designed fo
476. 1t3797 - 1T397 Variable Capacitance Diode Description M-235 The 1T397 is a variable capacitance diode designed for
477. 1t379 - 1T379 Silicon Variable Capacitance Diode for Electronic Tuning of BS and CS Tuners Description M-235 The 1T
478. 1t399 - 1T399 Variable Capacitance Diode Description M-235 The 1T399 is a variable capacitance diode designed for
479. 1t402 - 1T402 Variable Capacitance Diode Description M-290 The 1T402 is a variable capacitance diode designed for
480. 1t403 - 1T403 Variable Capacitance Diode Description M-290 The 1T403 is a variable capacitance diode designed for
481. 1t404 - 1T404 Variable Capacitance Diode Description M-290 The 1T404 is a variable capacitance diode designed for
482. 1t404a - 1T404A Variable Capacitance Diode Description M-290 The 1T404A is a variable capacitance diode designed fo
483. 1t405a - 1T405A Variable Capacitance Diode Description M-290 The 1T405A is a variable capacitance diode designed fo
484. 1t406 - 1T406 Variable Capacitance Diode Description M-290 The 1T406 is a variable capacitance diode designed for
485. 1t407 - 1T407 Variable Capacitance Diode Description M-290 The 1T407 is a variable capacitance diode designed for
486. 1t408 - 1T408 Variable Capacitance Diode Description M-290 The 1T408 is a variable capacitance diode designed for
487. 1t409 - 1T409 Variable Capacitance Diode Description M-290 The 1T409 is a variable capacitance diode designed for
488. 1t410 - 1T410 Variable Capacitance Diode Description M-290 The 1T410 is a variable capacitance diode designed for
489. 1t411 - 1T411 Variable Capacitance Diode Description M-235 The 1T411 is a variable capacitance diode designed for
490. 1t412 - 1T412 Variable Capacitance Diode Description M-290 The 1T412 is a variable capacitance diode designed for
491. 1t413 - 1T413 Variable Capacitance Diode Description M-290 The 1T413 is a variable capacitance diode designed for
492. 1t417 - 1T417 Variable Capacitance Diode Description M-290 The 1T417 is a variable capacitance diode designed for
493. 200cnq - Bulletin PD-2.257 rev. D 07/01 200CNQ... SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Char
494. 200hf - Bulletin I2020 rev. A 07/94 200HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 200 A High curr
495. 200mt40kb - Bulletin I27129 rev. B 01/02 200MT40KB THREE PHASE BRIDGE Power Module Features Package fully compatible w
496. 201cmq035 - Bulletin PD-2.400 rev. B 08/01 201CMQ... SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB isolated Major Ratings
497. 201cnq - Bulletin PD-2.258 rev. C 07/01 201CNQ... SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features
498. 203cmq080 - Bulletin PD-20565 rev. B 08/01 203CMQ... SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB isolated Major Ratings
499. 203cnq - Bulletin PD-2259 rev. E 06/01 203CNQ...(R) SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Cha
500. 203dmq080 - Bulletin PD-20579 rev. A 07/01 203DMQ... SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB isolated Common Cathode
501. 203dnq080 - Bulletin PD-20580 rev. A 07/01 203DNQ... SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Common Cathode Descri
502. 208cmq060 - Bulletin PD-20732 rev. A 08/01 208CMQ060 SCHOTTKY RECTIFIER 200 Amp TO-244AB isolated Major Ratings and Cha
503. 208cnq060 - Bulletin PD-20743 rev. A 07/01 208CNQ060 SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Characterist
504. 209cnq135 - Bulletin PD-20722 rev. B 07/01 209CNQ... SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Major Ratings and Char
505. 20bq030 - Bulletin PD-20717 rev. D 02/02 20BQ030 SCHOTTKY RECTIFIER 2 Amp SMB Major Ratings and Characteristics Desc
506. 20cjq030 - Bulletin PD-20477 rev. D 04/02 20CJQ030 SCHOTTKY RECTIFIER 2 Amp SOT-223 Major Ratings and Characteristics
507. 20cjq045 - Bulletin PD-20478 rev. E 04/02 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 Major Ratings and Characteristics
508. 20cjq060 - Bulletin PD-20479 rev. D 06/01 20CJQ060 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Rating
509. 20cjq100 - Bulletin PD-20480 rev. D 04/02 20CJQ100 SCHOTTKY RECTIFIER 2 Amp SOT-223 Major Ratings and Characteristics
510. 20clq045 - PD -20352E SCHOTTKY RECTIFIER 20CLQ045 HIGH EFFICIENCY SERIES 20A, 45V Major Ratings and Characteristics
511. 20ctq150 - Bulletin PD-20648 rev. B 03/02 20CTQ150 20CTQ150S 20CTQ150-1 SCHOTTKY RECTIFIER 20 Amp Description/Feature
512. 20ctq - Bulletin PD-20056 rev. A 12/01 20CTQ... 20CTQ...S 20CTQ... -1 SCHOTTKY RECTIFIER 20 Amp IF(AV) = 20Amp VR
513. 20etf-fp - Bulletin I2119 rev. C 03/99 QUIETIR Series 20ETF..FP FAST SOFT RECOVERY VF < 1.2V @ 10A RECTIFIER DIODE T
514. 20etf-hv - Preliminary Data Sheet I2127 09/97 QUIETIR Series 20ETF.. HV FAST SOFT RECOVERY VF < 1.31V @ 20A RECTIFIER
515. 20etf-s-hv - Preliminary Data Sheet I2128 09/97 QUIETIR Series 20ETF..S HV FAST SOFT RECOVERY VF < 1.31V @ 20A RECTIFIE
516. 20etf-s - Bulletin I2111 rev. C 03/99 QUIETIR Series 20ETF..S SURFACE MOUNTABLE VF < 1.2V @ 10A FAST SOFT RECOVERY
517. 20etf02 - Bulletin I2109 rev. B 03/99 QUIETIR Series 20ETF.. FAST SOFT RECOVERY VF < 1.2V @ 10A RECTIFIER DIODE IFS
518. 20etf08 - I2127 rev. A 01/2000 QUIETIR Series 20ETF.. HV FAST SOFT RECOVERY VF < 1.31V @ 20A RECTIFIER DIODE IFSM
519. 20etf08s - I2128 rev. A 01/2000 QUIETIR Series 20ETF..S HV FAST SOFT RECOVERY VF < 1.31V @ 20A RECTIFIER DIODE IFSM
520. 20ets-fp - Bulletin I2134 rev. C 03/99 SAFEIR Series 20ETS..FP INPUT RECTIFIER DIODE VF < 1V @ 10A TO-220 FULLPAK IF
521. 20ets08s - Bulletin I2101 rev. D 12/01 SAFEIR Series 20ETS12, 20ETS12S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300
522. 20ets16s - Bulletin I2161 10/01 SAFEIR Series 20ETS16, 20ETS16S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A VRRM
523. 20ets - Bulletin I2101 rev. B 07/97 SAFEIR Series 20ETS.. INPUT RECTIFIER DIODE VF < 1V @ 10A Description/Features
524. 20fq - PD-2.033 rev. E 12/97 20FQ... SERIES SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description
525. 20l15t - Bulletin PD-20577 rev. D 08/01 20L15T 20L15TS SCHOTTKY RECTIFIER 20 Amps Major Ratings and Characteristics
526. 20mt120uf - 5/ I27124 rev. D 02/03 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch T
527. 20mt40kb - Bulletin I27129 rev. A 11/01 200MT40KB THREE PHASE BRIDGE Power Module Features Package fully compatible w
528. 20tq - Bulletin PD-20241 rev. B 12/01 20TQ... 20TQ...S SCHOTTKY RECTIFIER 20 Amp IF(AV) = 19Amp VR = 35 to 45V M
529. 20vapec2002 - 20V MOSFETs for DC-DC Converters in Desktop Computers and Servers Dragan Mari? and Ralph Monteiro Internati
530. 21dq04 - Bulletin PD-20707 rev. B 03/02 21DQ04 SCHOTTKY RECTIFIER 2 Amp DO-41 Major Ratings and Characteristics Desc
531. 21dq06 - Bulletin PD-20714 rev. B 03/02 21DQ06 2 Amp SCHOTTKY RECTIFIER DO-41 Major Ratings and Characteristics De
532. 21fq - PD-2.043 rev. D 12/97 21FQ... SERIES SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description
533. 220cmq030 - Bulletin PD-2.555 rev. B 08/01 220CMQ030 SCHOTTKY RECTIFIER 220 Amp TO-244AB isolated Major Ratings and Cha
534. 220cnq030 - Bulletin PD-2.280 rev. C 07/01 220CNQ030 SCHOTTKY RECTIFIER 220 Amp TO-244AB Major Ratings and Characterist
535. 224cnq035 - Bulletin PD-2.260 rev. C 07/01 224CNQ... SERIES SCHOTTKY RECTIFIER 220 Amp TO-244AB Major Ratings and Chara
536. 225cnq - Bulletin PD-2.294 rev. D 07/01 225CNQ015 SCHOTTKY RECTIFIER 220 Amp TO-244AB Major Ratings and Characteris
537. 22cgq045 - PD - 20346C 22CGQ045 SCHOTTKY RECTIFIER 35* Amp Major Ratings and Characteristics Desciption/Features The 2
538. 22dgq045 - PD -20358E SCHOTTKY RECTIFIER 22DGQ045 HIGH EFFICIENCY SERIES 25A, 45V Major Ratings and Characteristics
539. 22gq100 - PD -20353D SCHOTTKY RECTIFIER 22GQ100 HIGH EFFICIENCY SERIES 30A, 100V Major Ratings and Characteristics
540. 22ria - Bulletin I2403 rev. A 07/00 22RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 22A Improved glass
541. 23c010 - HT23C010 CMOS 128K 8-Bit Mask ROM Features Operating voltage: 2.7V~5.5V 131072 8-bit of mask ROM L
542. 23c020 - HT23C020 CMOS 256K 8-Bit Mask ROM Features Operating voltage 2.7V~5.5V 262144 8-bit of mask ROM Lo
543. 23c040 - HT23C040 CMOS 512K 8-Bit Mask ROM Features Operating voltage: 2.7V~5.5V 524288 8-bit of mask ROM Low pow
544. 23c040h - HT23C040H CMOS 512K 8-Bit High Speed Mask ROM Features Operating voltage: 2.7V~5.5V 512K 8-bit of mask
545. 23c128 - HT23C128 CMOS 16K 8-Bit Mask ROM Features Operating voltage: 2.7V~5.5V 16384 8-bit of mask ROM Low
546. 23c256 - HT23C256 CMOS 32K 8-Bit Mask ROM Features Operating voltage 2.7V~5.5V 32768 8-bit of mask ROM Low
547. 23c512 - HT23C512 CMOS 64K 8-Bit Mask ROM Features Operating voltage: 2.7V~5.5V 65536 8-bit of mask ROM Low
548. 23sc1604 - ® ® ISSI IS23SC1604 ISSI IS23SC1604 ADVANCE INFORMATION 16-KBIT SECURED SERIAL EEPROM JANUARY 1999 F
549. 23sc4428 - ® IS23SC4418 ® IS23SC4418/4428 ISSI ISSI IS23SC4428 ADVANCE INFORMATION 1-KBYTE EEPROM APRIL 1998 WIT
550. 240nq - PD-2.230 rev. B 12/97 240NQ... SERIES SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Descripti
551. 240u060d - Bulletin I2029 rev. A 02/02 240U(R).. SERIES STANDARD RECOVERY DIODES Stud Version Features Diffused diode
552. 2416 - AT24C01A/02/04/08/16 Features • Low Voltage and Standard Voltage Operation 5.0 (V = 4.5V to 5.5V) CC 2.7 (
553. 241nq - PD-2.261 rev. A 12/97 241NQ... SERIES SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Descripti
554. 242nq030 - PD-2.281 rev. A 12/97 242NQ030 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Description/Feat
555. 243nq - PD-2.262 rev. A 12/97 243NQ... SERIES SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Descripti
556. 244nq035 - PD-2.295 rev. A 12/97 244NQ... SERIES SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Descripti
557. 245nq015 - Bulletin PD-2.296 rev. B 02/01 245NQ015(R) 240 Amp SCHOTTKY RECTIFIER D-67 Major Ratings and Characteristi
558. 249nq135 - PD-20721 12/99 249NQ... SERIES 240 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Description/Fe
559. 24aa00_lc00_c00 - 24AA00/24LC00/24C00 128 Bit I2C™ Bus Serial EEPROM Device Selection Table Package Types 8-PIN PDIP/SOIC Dev
560. 24aa014_lc014 - 24AA014/24LC014 1K I2C™ Serial EEPROM Device Selection Table Package Types PDIP/SOIC Part VCC Max Temp. A
561. 24aa01_lc01b - 24AA01/24LC01B 1K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA01
562. 24aa024_lc024_aa025_lc025 - 24AA024/24LC024/24AA025/24LC025 2K I2C™ Serial EEPROM Device Selection Table Description The Microchip Techn
563. 24aa02_lc02b - 24AA02/24LC02B 2K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA02
564. 24aa04_lc04b - 24AA04/24LC04B 4K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA04
565. 24aa08_lc08b - 24AA08/24LC08B 8K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA08
566. 24aa128_lc128_fc128 - 24AA128/24LC128/24FC128 128K I2C™ CMOS Serial EEPROM Device Selection Table Description The Microchip Techno
567. 24aa16_lc16b - 24AA16/24LC16B 16K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA1
568. 24aa256_lc256_fc256 - 24AA256/24LC256/24FC256 256K I2C™ CMOS Serial EEPROM Device Selection Table Description The Microchip Techno
569. 24aa32a_lc32a - 24AA32A/24LC32A 32K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA
570. 24aa512_lc512_fc512 - 24AA512/24LC512/24FC512 512K I2C™ CMOS Serial EEPROM Device Selection Table Description The Microchip Techno
571. 24aa515_lc515_fc515 - 24AA515/24LC515/24FC515 512K I2C™ CMOS Serial EEPROM Device Selection Table Package Type PDIP Part VCC Max
572. 24aa52_lcs52 - 24AA52/24LCS52 2K 2.2V I2C™ Serial EEPROM with Software Write-Protect Features Description • Single supply w
573. 24aa64_lc64 - 24AA64/24LC64 64K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA64
574. 24aa65_lc65_c65 - 24AA65/24LC65/24C65 64K I2C™ Smart Serial™ EEPROM Device Selection Table Part Number VCC Range Page Size Tem
575. 24c00 - 24AA00/24LC00/24C00 128 Bit I2C™ Bus Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPES 8-PIN PDIP/SOIC Dev
576. 24c01 - ® ® IS24C01 ISSI ISSI IS24C01 ADVANCE INFORMATION 1024-BIT SERIAL ELECTRICALLY APRIL 1998 ERASABLE P
577. 24c01_3 - ®® IS24C01-3 ISSI ISSI IS24C01-3 ADVANCE INFORMATION 1,024-BIT SERIAL ELECTRICALLY APRIL 1998 ERASABLE
578. 24c01a - 24C01A/02A/04A 1K/2K/4K 5.0V I2C? Serial EEPROMs FEATURES PACKAGE TYPES • Low power CMOS technology DIP A0
579. 24c01b_02b - M 24C01B/02B 1K/2K 5.0V I2C™ Serial EEPROM FEATURES PACKAGE TYPES PDIP • Single supply with 5.0V operation
580. 24c01c - 24C01C 1K 5.0V I2C™ Serial EEPROM Features Package Types PDIP/SOIC • Single supply with operation from 4.5
581. 24c02 - Standard EEPROM ICs SLx 24C01/02 1/2 Kbit (128/256 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire
582. 24c02_3 - ®® IS24C02-3 ISSI ISSI IS24C02-3 PRELIMINARY 2,048-BIT SERIAL ELECTRICALLY SEPTEMBER 1998 ERASABLE PROM
583. 24c02_c02r_w02 - ST24/25C02, ST24C02R ST24/25W02 SERIAL 2K (256 x 8) EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES
584. 24c02a-16a - Features • Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Compared to
585. 24c02c-1 - 24C02C 2K 5.0V I2C™ Serial EEPROM Features Package Types • Single supply with operation from 4.5 to 5.5V PD
586. 24c02c - M 24C02C 2K 5.0V I2C™ Serial EEPROM FEATURES PACKAGE TYPES PDIP/SOIC • Single supply with operation from 4
587. 24c02p - Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit (128/256 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wir
588. 24c04 - Standard EEPROM ICs SLx 24C04 4 Kbit (512 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data
589. 24c04_3 - ®® IS24C04-3 ISSI ISSI IS24C04-3 PRELIMINARY 4,096-BIT SERIAL ELECTRICALLY JANUARY 1998 ERASABLE PROM
590. 24c04_ - ®® IS24C04 ISSI ISSI IS24C04 JANUARY 1998 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM FEATURES • Low p
591. 24c04p - Standard EEPROM ICs SLx 24C04/P 4 Kbit (512 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus an
592. 24c0816 - Standard EEPROM ICs SLx 24C08/16 8/16 Kbit (1024/2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wi
593. 24c0816p - Standard EEPROM ICs SLx 24C08/16/P 8/16 Kbit (1024/2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-
594. 24c1024 - Features • Low-voltage Operation – 2.7 (VCC = 2.7V to 5.5V) • Internally Organized 131,072 x 8 • 2-wire Ser
595. 24c164 - Standard EEPROM ICs SLx 24C164 16 Kbit (2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus D
596. 24c164p - Standard EEPROM ICs SLx 24C164/P 16 Kbit (2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus
597. 24c16 - Standard EEPROM ICs SLx 24C08/16 8/16 Kbit (1024/2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wi
598. 24c16_3 - ® ® IS24C16-3 ISSI ISSI IS24C16-3 16,384-BIT SERIAL ELECTRICALLY ADVANCE INFORMATION OCTOBER 1997 ER
599. 24c16_ - ® ® IS24C16 ISSI ISSI IS24C16 16,384-BIT SERIAL ELECTRICALLY ADVANCE INFORMATION OCTOBER 1997 ERASAB
600. 24c16p - Standard EEPROM ICs SLx 24C08/16/P 8/16 Kbit (1024/2048 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-
601. 24c32 - Standard EEPROM ICs SLx 24C32 32 Kbit (4096 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Da
602. 24c32p - 32 Kbit (4096 ? 8 bit) Serial CMOS SLx 24C32/P EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode™ Pr
603. 24c64 - Standard EEPROM ICs SLx 24C64 64 Kbit (8192 ? 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Da
604. 24c64_ - ® ® IS24C64 ISSI ISSI IS24C64 65,552-BIT SERIAL ELECTRICALLY ADVANCE INFORMATION OCTOBER 1997 ERAS
605. 24c64p - 64 Kbit (8192 ? 8 bit) Serial CMOS SLx 24C64/P EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode™ Pr
606. 24c65 - 24C65 64K 5.0V I2C? Smart Serial? EEPROM FEATURES PACKAGE TYPES PDIP • Voltage operating range: 4.5V to 5.5
607. 24cxx1-xx2 - Advanced CAT24C161/162(16K), CAT24C081/082(8K) CAT24C041/042(4K), CAT24C021/022(2K) Supervisory Circuits wit
608. 24cxx3 - Advanced CAT24C163(16K), CAT24C083(8K) CAT24C043(4K), CAT24C023(2K) Supervisory Circuits with I2C Serial CMO
609. 24cxx8b - Standard EEPROM ICs Interfacing SLx 24Cxx I2C-Bus Serial EEPROMs to 8051 Controller Family, especially to
610. 24lc01_2 - 24LC01B/02B 1K/2K 2.5V CMOS Serial EEPROMs FEATURES PACKAGE TYPE DIP • Single supply with operation down to
611. 24lc01b - 24LC01B/02B 1K/2K 2.5V I2C? Serial EEPROM FEATURES PACKAGE TYPES • Single supply with operation down to 2.5V
612. 24lc02 - HT24LC02 CMOS 2K 2-Wire Serial EEPROM Features Operating voltage: 2.2V~5.5V Partial page write allowed
613. 24lc04 - HT24LC04 CMOS 4K 2-Wire Serial EEPROM Features Operating voltage: 2.2V~5.5V Partial page write allowed
614. 24lc04_8 - 24LC04B/08B 4K/8K 2.5V CMOS Serial EEPROMs FEATURES PACKAGE TYPE • Single supply with operation down to 2.5V
615. 24lc04b-08b - 24LC04B/08B 4K/8K 2.5V I2C? Serial EEPROMs FEATURES PACKAGE TYPES PDIP • Single supply with operation down
616. 24lc08 - HT24LC08 CMOS 8K 2-Wire Serial EEPROM Features Operating voltage: 2.2V~5.5V Partial page write allowed
617. 24lc08b - 24AA08/24LC08B M 8K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24A
618. 24lc164 - 24LC164 16K 2.5V Cascadable CMOS Serial EEPROM FEATURES PACKAGE TYPE • Single supply with operation down to
619. 24lc16 - HT24LC16 CMOS 16K 2-Wire Serial EEPROM Features Operating voltage: 2.2V~5.5V Partial page write allowed
620. 24lc16b - 24LC16B 16K 2.5V CMOS Serial EEPROM FEATURES PACKAGE TYPE DIP • Single supply with operation down to 2.5V
621. 24lc174 - 24LC174 16K 2.5V Cascadable CMOS Serial EEPROM with OTP Security Page FEATURES PACKAGE TYPE • Single supply
622. 24lc21-1 - Not recommended for new designs – Please use 24LCS21A. 24LC21 1K 2.5V Dual Mode I2C™ Serial EEPROM Features
623. 24lc21 -
624. 24lc21a - 24LC21A 1K 2.5V Dual Mode I2C™ Serial EEPROM Features Package Types • Single supply with operation down to 2
625. 24lc21i_p -
626. 24lc32 - 24LC32 32K 2.5V I2C? Smart Serial EEPROM FEATURES PACKAGE TYPES • Voltage operating range: 2.5V to 6.0V PDIP
627. 24lc32a - 24AA32A/24LC32A 32K I2C™ Serial EEPROM Device Selection Table Description The Microchip Technology Inc. 24AA
628. 24lc41 - 24LC41 1K/4K 2.5V Dual Mode, Dual Port I2C™ Serial EEPROM FEATURES PACKAGE TYPE • Single supply with operati
629. 24lc64b - M 24AA64/24LC64 64K I2C™CMOS Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPE PDIP Part Vcc Max Clock Temp
630. 24lc65 - 24LC65 64K 2.5V I2C? Smart Serial? EEPROM PACKAGE TYPES FEATURES • Voltage operating range: 2.5V to 6.0V PD
631. 24lcs21 - Not recommended for new designs – Please use 24LCS21A. 24LCS21 1K 2.5V Dual Mode I2C™ Serial EEPROM Feature
632. 24lcs21a - 24LCS21A 1K 2.5V Dual Mode I2C™ Serial EEPROM Features Package Types PDIP • Single supply with operation do
633. 24lcs22a - 24LCS22A 2K VESA® E-EDID™ Serial EEPROM Features Package Types PDIP/SOIC • Single supply with operation dow
634. 24wc01-16 - CAT24WC01/02/04/08/16 CAT24WC01/02/04/08/16 1K/2K/4K/8K/16K-Bit Serial E2PROM FEATURES Self-Timed Write Cy
635. 24wc03 - Preliminary CAT24WC03/05/09/17 2K/4K/8K/16K-Bit Serial E2PROM FEATURES Self-Timed Write Cycle with Auto-Cl
636. 24wc128 - Preliminary CAT24WC128 128K-Bit I2C Serial CMOS E2PROM FEATURES 1MHz I2C Bus Compatible* Write Protect F
637. 24wc129 - Preliminary CAT24WC129 128K-Bit I2C Serial CMOS E2PROM FEATURES 1MHz I2C Bus Compatible* Write Protect F
638. 24wc256 - Preliminary CAT24WC256 256K-Bit Serial CMOS E2PROM FEATURES 1MHz I2C Bus Compatible* Write Protect Featu
639. 24wc257 - Preliminary CAT24WC257 256K-Bit Serial CMOS E2PROM FEATURES 1MHz I2C Bus Compatible* Write Protect Featu
640. 24wc32-64 - Preliminary CAT24WC32/64 Preliminary CAT24WC32/64 32K/64K-Bit Serial CMOS E2PROM FEATURES 400 KHz I2C Bus
641. 24wc33-65 - Preliminary CAT24WC33/65 32K/64K-Bit Serial CMOS E2PROM FEATURES 400 KHz I2C Bus Compatible* Zero Standb
642. 24wcxx - CAT24WC01/02/04/08/16 1K/2K/4K/8K/16K-Bit Serial E2PROM FEATURES Self-Timed Write Cycle with Auto-Clear 4
643. 251ul80s -
644. 25aa040_lc040_c040 - 25AA040/25LC040/25C040 4K SPI™ Bus Serial EEPROM Communication to the device can be paused via the Device Se
645. 25aa080a-b_lc080a-b - 25AA080A/B, 25LC080A/B 8K SPI™ Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp
646. 25aa160a-b_lc160a-b - 25AA160A/B, 25LC160A/B 16K SPI™ Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Tem
647. 25aa320_lc320_c320 - 25AA320/25LC320/25C320 32K SPI™ Bus Serial EEPROM Device Selection Table Description: The Microchip Technolo
648. 25aa640_lc640 - 25AA640/25LC640 64K SPI™ Bus Serial EEPROM Device Selection Table Description The Microchip Technology Inc.
649. 25c010 - 1 Kbit (128 ? 8 bit) Serial CMOS EEPROMs, SLx 25C010 Serial Peripheral Interface (SPI) Synchronous Bus Prelim
650. 25c01 - Standard EEPROM ICs SLx 25C010 1 KBit (128 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (SP
651. 25c020 - 2 Kbit (256 ? 8 bit) Serial CMOS EEPROMs, SLx 25C020 Serial Peripheral Interface (SPI) Synchronous Bus Prelim
652. 25c02 - Standard EEPROM ICs SLx 25C020 2 Kbit (256 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (SP
653. 25c02_ - Advanced CAT25C02/04/08/16/32 2K/4K/8K/16K/32K SPI Serial CMOS E2PROM FEATURES 1,000,000 Program/Erase Cyc
654. 25c03 - Advanced CAT25C03/05/09/17/33 2K/4K/8K/16K/32K SPI Serial CMOS E2PROM FEATURES 1,000,000 Program/Erase Cyc
655. 25c040 - Standard EEPROM ICs SLx 25C040 4 Kbit (512 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (SP
656. 25c04 - Standard EEPROM ICs SLx 25C040 4 Kbit (512 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (SP
657. 25c080 - 8 Kbit (1024 ? 8 bit) Serial CMOS EEPROMs, SLx 25C080 Serial Peripheral Interface (SPI) Synchronous Bus Preli
658. 25c08 - Standard EEPROM ICs SLx 25C080 8 KBit (1024 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (S
659. 25c160 - Standard EEPROM ICs SLx 25C160 16 Kbit (2048 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (
660. 25c16 - Standard EEPROM ICs SLx 25C160 16 Kbit (2048 ? 8 bit) Serial CMOS-EEPROM with Serial Peripheral Interface (
661. 25c256 - Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES 100,000 Program/Erase Cycles 5 MH
662. 25c64-128 - Advance Information CAT25C64/128 64K/128K-Bit SPI Serial CMOS E2PROM FEATURES 1,000,000 Program/Erase Cycl
663. 25ctq - Bulletin PD-20242 rev. A 12/01 25CTQ... 25CTQ...S 25CTQ.. -1 SCHOTTKY RECTIFIER 30 Amp IF(AV) = 30Amp VR
664. 25cxxx - Advanced CAT25CXXX Supervisory Circuits with SPI Serial E2PROM, Precision Reset Controller and Watchdog Timer
665. 25ets08s - Bulletin I2158 05/00 SAFEIR Series 25ETS..S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/
666. 25f080a - NX25F080A NX25F080A 8M-BIT SERIAL FLASH MEMORY PRELIMINARY JUNE 1999 WITH 4-PIN SPI INTERFACE 1 FEATURES
667. 25f1141a - NX25F011A NX25F041A NX25F011A NX25F041A 1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE P
668. 25f - Bulletin I2018 rev. B 09/98 25F(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 25 A High surge c
669. 25f_r_series -
670. 25gq045 - PD -20354D SCHOTTKY RECTIFIER 25GQ045 HIGH EFFICIENCY SERIES 35A, 45V Major Ratings and Characteristics
671. 25l4004 - MX25L4004 4M-BIT [4M x 1] CMOS SERIAL FLASH EEPROM FEATURES • Low voltage operation: 2.7V ~ 3.6V • Status r
672. 25mt060wf - Target Data 05/01 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Techno
673. 25ria - Bulletin I2402 rev. A 07/00 25RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 25A Improved glass
674. 25tts-fp - Bulletin I2135 rev. D 03/99 SAFEIR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK VT < 1.25V @ 16A Des
675. 25tts-s - Bulletin I2117 rev. D 12/98 SAFEIR Series 25TTS..S SURFACE MOUNTABLE PHASE CONTROL SCR VT < 1.25V @ 16A D
676. 25tts - Bulletin I2116 rev. D 12/98 SAFEIR Series 25TTS.. PHASE CONTROL SCR VT < 1.25V @ 16A ITSM = 300A Descript
677. 271001 - M27C1001 1 Megabit (128K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 45ns COMPATIBLE with HIGH SPEED M
678. 271024 - M27C1024 1 Megabit (64K x16) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 55ns COMPATIBLE with HIGH SPEED MI
679. 27128 - M27128A NMOS 128K (16K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY V
680. 2716 - M2716 NMOS 16K (2K x 8) UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACC
681. 272001 - M27C2001 2 Megabit (256K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED M
682. 27256 - M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOL
683. 27256b - M27C256B 256K (32K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED MICROPR
684. 2732 - M2732A NMOS 32K (4K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTA
685. 274001 - M27C4001 4 Megabit (512K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED M
686. 274002 - M27C4002 4 Megabit (256K x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION:
687. 27512 - M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOL
688. 2764 - M2764A NMOS 64K (8K x 8) UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTA
689. 2764a - M27C64A 64K (8K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 150ns COMPATIBLE with HIGH SPEED MICROPROC
690. 27c010 - HT27C010 CMOS 128K 8-Bit OTP EPROM Features Operating voltage: +5.0V 128K 8-bit organization Progr
691. 27c020 - HT27C020 CMOS 256K 8-Bit OTP EPROM Features Operating voltage: +5.0V 256K 8-bit organization Progr
692. 27c040 - HT27C040 CMOS 512K 8-Bit OTP EPROM Features Operating voltage: +5.0V 512K 8-bits organization Prog
693. 27c16 - January 1989 27C16 16 384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified General Description Featu
694. 27c256-12a - 27C256-12A IL08D C-MOS 256K (32K x 8)-BIT EPROM —TOP VIEW— A7 A12 A14 A13 11 13 IN IN IN IN A0 D0 10 1
695. 27c256 - MX27C256 256K-BIT [32K x 8] CMOS EPROM FEATURES • 32K x 8 organization • Operating current: 30mA • Single
696. 27c256b - M27C256B 256K (32K x 8) UV EPROM and OTP ROM VERY FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED MICROPR
697. 27c4096 - HT27C4096 CMOS 256K 16-Bit OTP EPROM Features Operating voltage: +5.0V 256K 16-bits organization P
698. 27c512 - HT27C512 CMOS 64K 8-Bit OTP EPROM Features Operating voltage: +5.0V 64K 8-bit organization Program
699. 27c8000i - ADVANCED INFORMATION ADVANCED INFORMATION Industrial Grade MX27C8000 Industrial Grade MX27C8000 8M-BIT[
700. 27l2048 - ADVANCED INFORMATION ADVANCED INFORMATION MX27L2048 2M-BIT(256K x 8/128K x 16) CMOS EPROM FEATURES • 128K
701. 27l4100 - MX27L4100/27L4096 MX27L4100/27L4096 4M-BIT(512K x 8/256K x 16) CMOS EPROM FEATURES • 256K x 16 organizatio
702. 27lc010 - HT27LC010 CMOS 128K 8-Bit OTP EPROM Features Operating voltage: +3.3V 128K 8-bit organization Prog
703. 27lc020 - HT27LC020 CMOS 256K 8-Bit OTP EPROM Features Operating voltage: +3.3V 256K 8-bit organization Prog
704. 27lc040 - HT27LC040 CMOS 512K 8-Bit OTP EPROM Features Operating voltage: +3.3V 512K 8-bits organization Pro
705. 27lc4096 - HT27LC4096 CMOS 256K 16-Bit OTP EPROM Features Operating voltage: +3.3V 256K 16-bits organization
706. 27lc512 - HT27LC512 CMOS 64K 8-Bit OTP EPROM Features Fast programming algorithm 64K 8-bit organization Read
707. 27lv256-20i - 27LV256-20I/L ?????????? IL16 C-MOS 256k (32k x 8)-BIT EPROM -TOP VIEW- A7 A12 A14 A13 IN IN IN IN 11 13
708. 27lv256-20il - 27LV256-20I/L IL16D C-MOS 256 K (32 K x 8)-BIT EPROM —TOP VIEW— A7 A12 A14 A13 IN IN IN IN 4 3 2 1 32 3
709. 28010 - AT28C010 Com/Ind Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation Internal Addres
710. 28040 - AT28C040 Features • Fast Read Access Time - 150 ns • Automatic Page Write Operation Internal Address and Da
711. 28101 - M28F101 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standb
712. 28256 - M28F256 256K (32K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Curr
713. 28256a - AT28C256 Features • Fast Read Access Time - 150 ns • Automatic Page Write Operation Internal Address and Da
714. 28512 - M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Curr
715. 28c16a - CAT28C16A 16K-Bit CMOS PARALLEL E2PROM FEATURES DATA Fast Read Access Times: 200 ns End of Write Detection
716. 28c17a - CAT28C17A 16K-Bit CMOS PARALLEL E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: DAT
717. 28c256 - CAT28C256 32K-Bit Parallel E2PROM FEATURES Hardware and Software Write Protection Fast Read Access Times:
718. 28c257 - Advanced CAT28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES Automatic Page Write Operation: Fast Read Acc
719. 28c512-513 - Advanced CAT28C512/513 512K-Bit CMOS PARALLEL E2PROM FEATURES Fast Read Access Times: 120/150 ns Automat
720. 28c64a - 28C64A 64K (8K x 8) CMOS EEPROM FEATURES PACKAGE TYPES • Fast Read Access Time—150 ns RDY/BSY • 1 28 Vcc
721. 28c64b - CAT28C64B 64K-Bit CMOS PARALLEL E2PROM FEATURES Fast Read Access Times: Commercial, Industrial and Automo
722. 28c65b - CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES Fast Read Access Times: Commercial, Industrial and Automo
723. 28f001 - Licensed Intel CAT28F001 second source 1 Megabit CMOS Boot Block Flash Memory FEATURES Fast Read Access T
724. 28f002 - CAT28F002 Licensed Intel second source 2 Megabit CMOS Boot Block Flash Memory FEATURES Fast Read Access T
725. 28f010 - CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES Fast Read Access Time: 70/90/1
726. 28f010_ - ®® IS28F010 ISSI ISSI IS28F010 131,072 x 8 CMOS FLASH MEMORY JULY 1997 FEATURES • Flash electrical bulk
727. 28f020 - Licensed Intel CAT28F020 second source 2 Megabit CMOS Flash Memory FEATURES Commercial, Industrial and Au
728. 28f020_ - ® ® IS28F020 ISSI ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • Flash electric
729. 28f020_intel - E 28F020 2048K (256K X 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase Command Register Architecture for
730. 28f102 - CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES 64K x 16 Word Organization
731. 28f512 - Licensed Intel CAT28F512 second source 512K-Bit CMOS Flash Memory FEATURES Fast Read Access Time: 90/120/
732. 28lv256 - Preliminary CAT28LV256 256K-Bit CMOS PARALLEL E2PROM FEATURES 3.0V to 3.6V Supply CMOS and TTL Compatible
733. 28lv64 - Preliminary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES CMOS and TTL Compatible I/O 3.0V to 3.6 V Su
734. 28lv64a - 28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES PACKAGE TYPES • 2.7V to 3.6V Supply • Read Access Tim
735. 28lv65 - Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES 3.0V to 3.6V Supply CMOS and TTL Compatible I/
736. 29010 - AT29C010A Features • Fast Read Access Time - 70 ns • 5-Volt-Only Reprogramming • Sector Program Operation
737. 29010a - AT29C010A Features • Fast Read Access Time - 70 ns • 5-Volt-Only Reprogramming • Sector Program Operation
738. 29020 - AT29C020 Features • Fast Read Access Time - 90 ns • 5-Volt-Only Reprogramming • Sector Program Operation S
739. 29040 - AT29C040A Features • Fast Read Access Time - 120 ns • 5-Volt-Only Reprogramming • Sector Program Operation
740. 29040a - AT29C040A Features • Fast Read Access Time - 120 ns • 5-Volt-Only Reprogramming • Sector Program Operation
741. 29040l - AT29LV040A Features • Single Voltage, Range 3V to 3.6V Supply • 3-Volt-Only Read and Write Operation • Soft
742. 29c040x - Features • Fast Read Access Time - 100 ns • 5-Volt-Only Reprogramming • Sector Program Operation Single Cyc
743. 29dl16x - FUJITSU SEMICONDUCTOR AE1.0E DATA SHEET FLASH MEMORY CMOS 16M (2M ? 8/1M ? 16) BIT Dual Operation MBM29DL
744. 29f010 - High Performance AS29F010 H i g h P e r f o r m a n c e A S 2 9 F 010 128K?8 128 K ?
745. 29f080 - High performance AS29F080 1M?8 5V CMOS Flash EEPROM ® 1 Megabit?8 CMOS Flash EPROM Preliminary information
746. 29f400 - High Performance AS29F400 512K?8/256K?16 5V CMOS Flash EEPROM ® 512K?8/256K?16 CMOS Flash EEPROM Prelimina
747. 29mt050xh - Target Data 05/01 29MT050XH "HALF-BRIDGE" FREDFET MTP HEXFET® Power MOSFET Features • Low On-Resistance VD
748. 2kbb_series - Bulletin E2733 rev.C 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics Desc
749. 2kbp_series -
750. 2n1613 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor 1997 Apr 11
751. 2n1711 - 2N1711 ® EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jede
752. 2n1792 -
753. 2n1893 - 2N1893 ® SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Si
754. 2n2102 - 2N2102 ® EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon
755. 2n2218-2n2219-2n2221-2n2222 - 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
756. 2n2219a_2n2222a - 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon P
757. 2n2222a_phi - DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product s
758. 2n2369 - DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor 1997 Jun 20 Product specificati
759. 2n2369re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N2369/D Switching Transistors 2N2369 NPN Si
760. 2n2484 - DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2484 NPN general purpose transistor 1997 May 01 Product speci
761. 2n2904-2n2905-2n2906-2n2907 - 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906
762. 2n2905 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors 1997 M
763. 2n2905a_2n2907a - 2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Ep
764. 2n2907 - DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product s
765. 2n2955 - UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3
766. 2n3019 - 2N3019 ® SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor
767. 2n3055 - 2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxi
768. 2n3055_utc - UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3
769. 2n3055a1 - Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A
770. 2n3055re - Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon
771. 2n3390 - Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purp
772. 2n3391a - Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purp
773. 2n3392 - Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purp
774. 2n3393 - Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purp
775. 2n3415 - 2N3415 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplif
776. 2n3416 - 2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpos
777. 2n3417 - 2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpos
778. 2n3439 - 2N3439 2N3440 ® SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIP
779. 2n3442r7 - Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transi
780. 2n3442re - Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transi
781. 2n3553 - DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor 1995 Oct 27 Product
782. 2n3663 - 2N3663 B TO-92 C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and mu
783. 2n3702 - 2N3702 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switch
784. 2n3703 - 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switch
785. 2n3704 - 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switch
786. 2n3715re - Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transi
787. 2n3771 - 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION
788. 2n3771re - Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Pow
789. 2n3772 - UTC 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3772 is a power-base power transistor in
790. 2n3773 - UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base p
791. 2n3773re - Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon P
792. 2n3791re - Order this document MOTOROLA by 2N3791/D SEMICONDUCTOR TECHNICAL DATA 2N3791 Silicon PNP Power Transistors
793. 2n3819 - 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating u
794. 2n3820 - 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and genera
795. 2n3859a - 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switc
796. 2n3866 - DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27
797. 2n3903 - 2N3903 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplif
798. 2n3903_sam - 2N3903 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Elect
799. 2n3903re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D General Purpose Transistors 2N3903
800. 2n3904 - 2N3904 ® SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N39
801. 2n3904_3 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Pro
802. 2n3905 - 2N3905 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplif
803. 2n3905re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905
804. 2n3906 - 2N3906 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N39
805. 2n4031 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4031; 2N4033 PNP medium power transistors 1997
806. 2n4033 - 2N4033 ® SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor
807. 2n4036 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor 1997 Jun 19 Pro
808. 2n4036r0 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Sili
809. 2n4123 - []]]]]]]]]]]]]]] []]]]]]]]]]]]]] 2N4123 C TO-92 B E NPN General Purpose Amplifier This device is designe
810. 2n4123re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D General Purpose Transistors NPN Sili
811. 2n4124 - 2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is design
812. 2n4125 - 2N4125 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplif
813. 2n4125re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4125/D Amplifier Transistors PNP Silicon 2
814. 2n4126 - 2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designe
815. 2n4264re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistors NPN Sili
816. 2n4398re - Order this document MOTOROLA by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon Hig
817. 2n4400-4401 - 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V
818. 2n4400 - 2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark: 83 NPN General Purpose Amplifier This device is designe
819. 2n4400re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4400/D General Purpose Transistors 2N4400
820. 2n4401 - 2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark: 2X NPN General Pupose Amplifier This device is designe
821. 2n4402-4403 - 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V
822. 2n4402 - 2N4402 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplif
823. 2n4402re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402
824. 2n4403 - 2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is design
825. 2n4410 - Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is des
826. 2n4410re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N
827. 2n4918re - Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thr
828. 2n4921re - Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thr
829. 2n4953 - 2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switch
830. 2n5038 - 2N5038 ® HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DE
831. 2n5038re - Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transi
832. 2n5060 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled
833. 2n5086 - 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, l
834. 2n5086re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Si
835. 2n5087 - 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, l
836. 2n5087rev0 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N
837. 2n5088-5089_sam - 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2
838. 2n5088 - 2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier
839. 2n5088re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2
840. 2n5089 - 2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier
841. 2n5172 - 2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplif
842. 2n5191 - 2N5191 2N5192 MEDIUM POWER NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR APPL
843. 2n5191re - Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Tr
844. 2n5194re - Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Tr
845. 2n5195 - 2N5195 ® MEDIUM POWER PNP SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR AP
846. 2n5209re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2
847. 2n5210 - 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general pu
848. 2n5210_sam - 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V •
849. 2n5246 - 2N5246 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where p
850. 2n5301re - Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silico
851. 2n5306 - 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high curren
852. 2n5307 - 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current
853. 2n5308 - 2N5308 NPN Darlington Transistor • This device is designed for applications requiring extremely high curren
854. 2n5320 - 2N5320 ® SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPN transistor
855. 2n5322 - 2N5322 ® SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNP transistor
856. 2n5366 - 2N5366 PNP General Purpose Amplifier • This device is designed for general purpose amplifiers applications at
857. 2n5400 - 2N5400 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplif
858. 2n5400_sam - 2N5400 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Elect
859. 2n5400re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Si
860. 2n5401 - 2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designe
861. 2n5401_3 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor 1999 Apr 08
862. 2n5401_sam - 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V
863. 2n5401_utc - UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter V
864. 2n5415 - 2N5415 2N5416 ® SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRI
865. 2n5457 - 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are
866. 2n5457re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N–Chan
867. 2n5458 - 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are
868. 2n5459 - 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are
869. 2n5460 - 2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E /
870. 2n5460rev0x - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 P–Channel —
871. 2n5461 - 2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E /
872. 2n5462 - 2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E /
873. 2n5484 - 2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Sou
874. 2n5485 - 2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Sou
875. 2n5486 - 2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Sou
876. 2n5550 - AmpIifier Transistor • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC (max)=625mW
877. 2n5550_5551_3 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999
878. 2n5550re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Si
879. 2n5551 - 2N5551 MMBT5551 C E C TO-92 B B E SOT-23 Mark: 3S NPN General Purpose Amplifier This device is designe
880. 2n5551_sam - 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V TO-92 •
881. 2n5551_utc - UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emi
882. 2n5555rev0x - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5555/D JFET Switching N–Channel — Depletion
883. 2n5630re - Order this document MOTOROLA by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage High Power
884. 2n5638 - 2N5638 N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits a
885. 2n5639 - 2N5639 N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits a
886. 2n5655re - Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon
887. 2n5657 - 2N5657 ® SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION T
888. 2n5684re - Order this document MOTOROLA by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementa
889. 2n5758re - Order this document MOTOROLA by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 (See 2N4398) 2N5758 High-Vo
890. 2n5769 - Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed
891. 2n5770 - Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for us
892. 2n5771 - 2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed fo
893. 2n5830 - Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is des
894. 2n5877re - Order this document MOTOROLA by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 Complementary Silicon 2
895. 2n5879re - Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2
896. 2n5883re - Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon H
897. 2n5886 - 2N5886 ® HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT
898. 2n5952 - 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such
899. 2n5961 - Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is des
900. 2n5962 - Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark: 117 NPN General P
901. 2n6027 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6027/D 2N6027 Programmable 2N6028 Unijunc
902. 2n6035re - Order this document MOTOROLA by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 (See 2N5630) Pla
903. 2n6036 - 2N6036 2N6039 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics PREFER
904. 2n6040re - Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Co
905. 2n6050re - Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary
906. 2n6055re - Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary
907. 2n6059 - 2N6059 ® SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN D
908. 2n6071 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6071/D * 2N6071,A,B * 2N6073,A,B Sensiti
909. 2n6076 - DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.145 1 2 3 (3.
910. 2n6107 - 2N6107 2N6111 ® SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTO
911. 2n6107re - Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Com
912. 2n6237 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6237/D 2N6237 thru Silicon Controlled Rect
913. 2n6251re - Order this document MOTOROLA by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Powe
914. 2n6274re - Order this document MOTOROLA by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 High-Power NPN Silicon 2N627
915. 2n6282re - Order this document MOTOROLA by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6282 Darlington Complementary
916. 2n6284 - 2N6284 2N6287 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTY
917. 2n6338re - Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Trans
918. 2n6342 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirec
919. 2n6346a - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6346A/D Triacs 2N6346A Silicon Bidirection
920. 2n6379re - Order this document MOTOROLA by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon *Mot
921. 2n6387re - Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388*
922. 2n6388 - 2N6388 ® SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON
923. 2n6426 - Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designe
924. 2n6426re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6426/D Darlington Transistors 2N6426* NPN
925. 2n6427 - 2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed f
926. 2n6436re - Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N643
927. 2n6439re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF
928. 2n6439rev0 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF
929. 2n6487 - 2N6487 2N6488/2N6490 ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES
930. 2n6487re - Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Pl
931. 2n6497re - Order this document MOTOROLA by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Sil
932. 2n6504 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6504/D 2N6504 thru Thyristors 2N6509* Si
933. 2n6515 - 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 250
934. 2n6515re - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515
935. 2n6517 - 2N6517 High Voltage Transistor • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC (max)=625m
936. 2n6517_sam - 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=350V
937. 2n6518 - 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=62
938. 2n6519 - 2N6519 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=62
939. 2n6520 - 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC (max)=62
940. 2n6520_sam - 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A
941. 2n6547 - 2N6547 ® HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH
942. 2n6547re - Order this document MOTOROLA by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N6547 Designer's? Data Sheet 15 AM
943. 2n6576re - Order this document MOTOROLA by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 NPN Silicon Power Dar
944. 2n6667re - Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Sili
945. 2n6668 - 2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON
946. 2n6756 - PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET?TRANSISTORS JANTXV2N6756 THRU-HO
947. 2n6758 - PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET?TRANSISTORS JANTXV2N6758 THRU-H
948. 2n6760 - PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HO
949. 2n6762 - PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HO
950. 2n6764 - 2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770,
951. 2n6766 - PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HO
952. 2n6768 - PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HO
953. 2n6770 - PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET?TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/A
954. 2n6782 - PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET?TRANSISTORS JANTXV2N6782 THRU-H
955. 2n6784 - PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET?TRANSISTORS JANTXV2N6784 THRU-H
956. 2n6786 - PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET?TRANSISTORS JANTXV2N6786 THRU-H
957. 2n6788 - PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET?TRANSISTORS JANTXV2N6788 THRU-H
958. 2n6790 - PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET?TRANSISTORS JANTXV2N6790 THRU-H
959. 2n6792 - PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET?TRANSISTORS JANTXV2N6792 THRU-HO
960. 2n6794 - PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET?TRANSISTORS JANTXV2N6794 THRU-H
961. 2n6796 - 2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JA
962. 2n6796u - Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET® TR
963. 2n6798 - PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET?TRANSISTORS JANTXV2N6798 THRU-HO
964. 2n6800 - PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET?TRANSISTORS JANTXV2N6800 THRU-H
965. 2n6802 - PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET?TRANSISTORS JANTXV2N6802 THRU-HO
966. 2n6804 - PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET?TRANSISTORS JANTXV2N6804 THRU-H
967. 2n6806 - PD - 90548C IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806 HEXFET?TRANSISTORS JANTXV2N6806 THRU-H
968. 2n681_2n5204 -
969. 2n6836re - Order this document MOTOROLA by 2N6836/D SEMICONDUCTOR TECHNICAL DATA 2N6836 Designer's? Data Sheet 15 AM
970. 2n6845 - PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET?TRANSISTORS JANTXV2N6845 THRU-
971. 2n6847 - PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET?TRANSISTORS JANTXV2N6847 THRU-
972. 2n6849 - PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET?TRANSISTORS JANS
973. 2n6851 - PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET?TRANSISTORS J
974. 2n6975 - 2N6975, 2N6976, S E M I C O N D U C T O R 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Apri
975. 2n7000 - November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Descr
976. 2n7000_sam - N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inducti
977. 2n7000bu - Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ?
978. 2n7000r3 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channe
979. 2n7000ta - Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ?
980. 2n7002 - November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Descr
981. 2n7002_sam - N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Lower Rds(on) RDS(on) = 5.0 Improved Inductive Rugg
982. 2n7002lt1 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3
983. 2n7002lt1rev2 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3
984. 2n7002mtf - Advanced Small Signal MOSFET 2N7002MTF FEATURES BVDSS = 60 V Lower RDS(on) RDS(on) = 5.0 ? Improved Indu
985. 2n7002r2 - MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3
986. 2n7051 - 2N7051 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at c
987. 2n7052 - Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B
988. 2n7053 - Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B
989. 2n720a - 2N720A ® EPITAXIAL PLANAR NPN HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Ep
990. 2n7218 - 2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222,
991. 2n7222 -
992. 2n7224 - 2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228,
993. 2pa1774_2 - DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PA1774 PNP general purpose transistor 1999 Jun 01 Preliminary
994. 2pa1774j_2 - DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor 1999 May 04 Preliminary
995. 2pa733_4 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA733 PNP general purpose transistor 1999 May 2
996. 2pb1219a_3 - DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 2PB1219A PNP general purpose transistor 1999
997. 2pb709a_4 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB709A PNP general purpose transistor 1999 Apr
998. 2pb710a_6 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB710A PNP general purpose transistor 1999 May
999. 2pc1815_3 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May
1000. 2pc4081_4 - DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PC4081 NPN general purpose transistor 1999 Apr

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